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Low temperature deposition of epitaxial titanium carbide on MgO(001) by co-evaporation of C-60 and Ti
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
1997 (English)In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, no 6, 3082-3085 p.Other (Other scientific)
Abstract [en]

Films of epitaxial titanium carbide were grown on MgO(001) at 400 and 500 degrees C using a novel method based on the co-evaporation of Ti and C-60. Mirrorlike, adhesive films of TiC1-x (0.2<x<0.4) were deposited at growth rates of approximately 0.1 mu m

Place, publisher, year, pages
AMER INST PHYSICS , 1997. Vol. 15, no 6, 3082-3085 p.
Keyword [en]
SILICON-CARBIDE; CARBONIZATION; GROWTH; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-77619OAI: oai:DiVA.org:uu-77619DiVA: diva2:105531
Note
Addresses: Norin L, UNIV UPPSALA, DEPT INORGAN CHEM, ANGSTROM LAB, POB 538, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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