Low temperature conduction-band transport in diamond
2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 109, no 16, 162106Article in journal (Refereed) Published
By performing Time-of-Flight measurements on high-purity single-crystalline chemical vapor deposited diamond, we are able to extract the electron drift velocity of valley-polarized electrons in the low-injection regime. The aim of this study is to improve the understanding of the mechanisms involved in the conduction-band transport of valley-polarized electrons. The measurements were carried out within the temperature range of 10-80 K, and the experimental results are systematically compared with Monte Carlo charge transport simulations. We observe a rapid enhancement of the electron mobility with decreasing temperature, which reveals that inelastic effects in electron-phonon scattering become important below similar to 40 K. In addition, we obtain the momentum relaxation rate for electrons with different valley polarizations.
Place, publisher, year, edition, pages
2016. Vol. 109, no 16, 162106
Condensed Matter Physics Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-310010DOI: 10.1063/1.4964720ISI: 000386933200020OAI: oai:DiVA.org:uu-310010DiVA: diva2:1055360
FunderSwedish Research Council, 621-2014-6026ÅForsk (Ångpanneföreningen's Foundation for Research and Development), 15-288Carl Tryggers foundation , 14:151 15:225Swedish National Infrastructure for Computing (SNIC), SNIC2014-3-65