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Scintillation studies of CdS(In): effects of various semiconductor doping strategies
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics. Department of Physics and Materials Science, Physics IV.
2005 (English)In: Nuclear Instruments and Methods in Physics Research Section A, ISSN 0168-9002, Vol. 537, no 1-2, 261- p.Article in journal (Refereed) Published
Abstract [en]

We present room-temperature photoluminescence and pulsed X-ray measurements of powder samples of CdS(In) codoped with three hole traps (Te, Ag, and Na). Te is an isoelectronic hole trap and Ag, and Na are acceptor hole traps. The emission of CdS(In) excited at 430 nm is centered at approximate to 520 nm (near the band edge) with approximate to 20 nm FWHM. The emissions from CdS(Te) and the three codoped samples are shifted to longer wavelengths and are characterized by broad emission bands peaking near 630 nm. Whereas the decay of the CdS(Te) emission is nonexponential with times > 10 its, the decay of CdS(In, Te) is 3.3 ns and exponential over three decades. The decay of the acceptor-doped samples CdS(In,Ag) and CdS(In, Na) are also fast, 2.5 and 2.8 ns, respectively. These results show the potential for developing fast inorganic scintillators based on direct-gap semiconductors that can be codoped to provide fast radiative recombination. Additional work is needed to increase the luminosity.

Place, publisher, year, edition, pages
2005. Vol. 537, no 1-2, 261- p.
Keyword [en]
cadmium sulfide, scintillation mechanisms, radiative recombination, doping II-VI semiconductors
URN: urn:nbn:se:uu:diva-79852DOI: doi:10.1016/j.nima.2004.08.022OAI: oai:DiVA.org:uu-79852DiVA: diva2:107766
Available from: 2006-04-13 Created: 2006-04-13 Last updated: 2011-01-11

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