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Diamond deposition from halogenated methane precursors on Si and SiC substrates
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets fysik.
Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
1997 (English)In: Diamond and Related Materials, Vol. 6, no 1, 85-88 p.Article in journal (Refereed) Published
Abstract [en]

Diamond films have been grown on Si and SiC substrates using the hot filament method and CF4, CCl2F2 and CCl4 as carbon precursor gases. It has been shown that the quality of the diamond films grown on Si substrates gets worse when the fluorine concentra

Place, publisher, year, edition, pages
1997. Vol. 6, no 1, 85-88 p.
Keyword [en]
halomethane; halogenated; etching; SiC; CHEMICAL-VAPOR-DEPOSITION; MICROWAVE-PLASMA; GROWTH; MIXTURE; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-80048OAI: oai:DiVA.org:uu-80048DiVA: diva2:107962
Note
Addresses: Nyberg T, UNIV UPPSALA, DEPT TECHNOL, ANGSTROM CONSORTIUM, BOX 534, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, DEPT CHEM, ANGSTROM CONSORTIUM, S-75121 UPPSALA, SWEDEN.Available from: 2007-03-08 Created: 2007-03-08 Last updated: 2011-01-15

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Nyberg, TomasCarlsson, Jan-Otto

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