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Use of oxygen-stabilized C-60 films for selective chemical vapor deposition
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
1997 (English)In: APPLIED PHYSICS LETTERS, Vol. 70, no 5, 586-588 p.Other (Other scientific)
Abstract [en]

Thin C-60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in the

Place, publisher, year, pages
AMER INST PHYSICS , 1997. Vol. 70, no 5, 586-588 p.
Keyword [en]
SURFACE-CHEMISTRY; TUNGSTEN; SILICON; GROWTH
Identifiers
URN: urn:nbn:se:uu:diva-80723OAI: oai:DiVA.org:uu-80723DiVA: diva2:108637
Note
Addresses: McGinnis S, UNIV UPPSALA, DEPT INORGAN CHEM, THIN FILM CVD GRP, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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