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Atomic layer epitaxy of copper on tantalum
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
1997 (English)In: Chemical Vapor Deposition, Vol. 3, no 1, 45-50 p.Article in journal (Refereed) Published
Abstract [en]

The decreasing size and increasing complexity of the components in future microelectronics devices present a great challenge in the development of new deposition techniques. One method for the deposition of semiconductor materials which has gen erated co

Place, publisher, year, edition, pages
1997. Vol. 3, no 1, 45-50 p.
Keyword [en]
atomic layer epitaxy, hot-wall, copper, copper(I) chloride, tantalum, CHEMICAL-VAPOR-DEPOSITION, THIN-FILMS, DISSOCIATIVE ADSORPTION, CVD, METALLIZATION, DESORPTION, REDUCTION, CHLORIDE, HYDROGEN, GROWTH
National Category
Organic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-80781DOI: doi:10.1002/cvde.19970030107OAI: oai:DiVA.org:uu-80781DiVA: diva2:108695
Note
Addresses: Martensson P, UNIV UPPSALA, DEPT INORGAN CHEM, THIN FILM & SURFACE CHEM GRP, BOX 531, S-75121 UPPSALA, SWEDEN.Available from: 2005-10-10 Created: 2005-10-10 Last updated: 2011-01-15

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Carlsson, Jan-Otto

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