Structural and magnetic properties of Co-N thin films deposited using magnetron sputtering at 523 K
2017 (English)In: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 694, 1209-1213 p.Article in journal (Refereed) Published
In this work, we studied cobalt nitride (Co-N) thin films deposited using a dc magnetron sputtering method at a substrate temperature (T-s) of 523 K. We find that independent of the reactive gas flow (R-N2) used during sputtering, the phases of Co-N formed at this temperature seems to be identical having N at.% similar to 5. This is contrary to Co-N phases formed at lower T-s. For example at T-s similar to 300 K, an evolution of Co-N phases starting from Co(N) -> Co4N -> Co-3 N -> CoN can be seen as R-N2 increases gradually to 100%, whereas when T-s increases to 523 K, the phase formed is fcc Co along with a minuscule Co4N phase for R-N2 >= 25%. We used x-ray diffraction (XRD) to probe long range ordering, x-ray absorption spectroscopy (XAS) at Co absorption edge for the local structure, Magneto-optical Kerr effect (MOKE) and polarized neutron reflectivity (PNR) to measure the magnetization of samples. Quantification of N at.% was done using secondary ion mass spectroscopy (SIMS). Measurements suggest that the magnetic moment of Co N samples deposited at 523 K is slightly higher than the bulk Co moment and does not get affected with the R-N2 used for reactive sputtering. Our results provide an important insight about the phase formation of Co-N thin films which is discussed in this work.
Place, publisher, year, edition, pages
2017. Vol. 694, 1209-1213 p.
Cobalt nitride thin films, Tetra cobalt nitride, Reactive nitrogen sputtering
Chemical Sciences Physical Sciences
IdentifiersURN: urn:nbn:se:uu:diva-313922DOI: 10.1016/j.jallcom.2016.10.095ISI: 000390622900156OAI: oai:DiVA.org:uu-313922DiVA: diva2:1087098