uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Buffer Layer Point Contacts for CIGS Solar Cells Using Nanosphere Lithography and Atomic Layer Deposition
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA..
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA..
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA..
2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 1, 322-328 p.Article in journal (Refereed) Published
Abstract [en]

Point contacts provide an interesting approach for reducing the buffer layer/Cu(In, Ga)Se-2 interface recombination that typically limits Cu(In, Ga) Se-2 solar cell performance when nontoxic alternatives to CdS buffer layers are used. In this study, we implement a scheme to create a point contact buffer layer on Cu(In, Ga)Se-2 solar cells using a combination of atomic layer deposition and nanosphere lithography. While we showcase these buffer layers using Al2O3 as the passivating material, ZnO as the conductive material, and a silica nanosphere size of 310 nm in diameter, this scheme is general and could readily be applied for other materials and other sphere sizes. The resulting solar cells with Al2O3 and ZnO point contact buffer layers demonstrate successful application of this scheme, yielding a higher conversion efficiency (6.58 +/- 0.58%) than either of the binary buffer layers Al2O3 (0%) and ZnO (5.15 +/- 0.57%). The improvement over ZnO is mainly due to an increased open circuit voltage, which is an indication of a reduced surface recombination.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. Vol. 7, no 1, 322-328 p.
Keyword [en]
Atomic layer deposition, buffer layer, Cu(In, Ga)Se-2 (CIGS) thin film solar cell, nanosphere lithography, point contacts
National Category
Energy Engineering
Identifiers
URN: urn:nbn:se:uu:diva-319291DOI: 10.1109/JPHOTOV.2016.2627621ISI: 000395836800046OAI: oai:DiVA.org:uu-319291DiVA: diva2:1088170
Available from: 2017-04-11 Created: 2017-04-11 Last updated: 2017-04-11Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Hultqvist, Adam
By organisation
Solid State Electronics
In the same journal
IEEE Journal of Photovoltaics
Energy Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 199 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf