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Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
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2006 (English)In: Applied Physics Letters, Vol. 88, 191905- p.Article in journal (Refereed) Published
Abstract [en]

The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O2/H2O environment. Ar+ with an average kinetic energy of ~5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from –15 V (floating potential) to –100 V, the hydrogen content decreased by ~70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H2 formation, and desorption [Rosén et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.

Place, publisher, year, edition, pages
2006. Vol. 88, 191905- p.
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Inorganic Chemistry
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URN: urn:nbn:se:uu:diva-80924DOI: doi:10.1063/1.2193044OAI: oai:DiVA.org:uu-80924DiVA: diva2:108838
Available from: 2006-06-27 Created: 2006-06-27 Last updated: 2011-01-11

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Widenkvist, ErikaLarsson, Karin

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