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Influence of CdS and ZnSnO Buffer Layers on the Photoluminescence of Cu(In,Ga)Se-2 Thin Films
Int Iberian Nanotechnol Lab, Lab Nanostruct Solar Cells, P-4715330 Braga, Portugal..
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 2, p. 670-675Article in journal (Refereed) Published
Abstract [en]

The search for alternatives to the CdS buffer layer in Cu(In,Ga)Se-2 (CIGS) solar cells has turned out to be quite promising in terms of power conversion efficiency. In this paper, the typically used chemical-bath-deposited CdS layer is compared with an atomic-layer-deposited Zn1-xSnxOy (ZnSnO). An optical study by external quantum efficiency and photoluminescence on the influence of different buffer layers on the defect properties of CIGS is presented. For both buffer layers, the CIGS bulk and CIGS/buffer interface are strongly influenced by electrostatic fluctuating potentials, which are less pronounced for the sample with the ZnSnO buffer layer. This is associated with a lower concentration of donor defects at the CIGS near-interface layer. A change in the bandgap of the CIGS as a consequence of the buffer layer deposition is observed. This study expands the knowledge of defects in the complex quaternary semiconductor CIGS, which, as discussed, can be affected even by the choice of buffer layer and its deposition process.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. Vol. 7, no 2, p. 670-675
Keywords [en]
CdS buffer layer, Cu(In, Ga)Se-2 (CIGS), photoluminescence, thin-film solar cells, Zn1-xSnxOy buffer layer
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-322227DOI: 10.1109/JPHOTOV.2016.2639347ISI: 000399991500035OAI: oai:DiVA.org:uu-322227DiVA, id: diva2:1096359
Available from: 2017-05-17 Created: 2017-05-17 Last updated: 2017-05-23Bibliographically approved

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Keller, JanTörndahl, Tobias

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