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MeV Ion Irradiation Effects on the Luminescence Properties of Si-implanted SiO2-thin Films
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics. (Ion Physics)ORCID iD: 0000-0001-7229-6857
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
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2016 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 13, no 10-12, p. 921-926Article in journal (Refereed) Published
Abstract [en]

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO2 by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (lambda) and decay lifetime (t), two PL sources are distinguished: i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (lambda > 720 nm, tau similar to mu s), and ii) fast-decay PL, possibly due to oxide-related defects (lambda similar to 575-690 nm, tau similar to ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2016. Vol. 13, no 10-12, p. 921-926
Keywords [en]
silicon nanoparticle, ion implantation, photoluminescence, MeV heavy ion irradiation
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-322309DOI: 10.1002/pssc.201600077ISI: 000399448900040OAI: oai:DiVA.org:uu-322309DiVA, id: diva2:1096753
Conference
EMRS Spring Meeting / Symposium K / Symposium BB / Symposium E / Symposium O / Symposium Y, MAY 02-06, 2016, Lille, FRANCE
Funder
Swedish Research CouncilAvailable from: 2017-05-19 Created: 2017-05-19 Last updated: 2018-03-22
In thesis
1. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
Open this publication in new window or tab >>Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. In this thesis, silicon nanoparticles are formed in thermally grown SiO2 films by implantation of Si-ions. Implantation parameters such as energy, fluence, and target temperature, as well as post-implantation annealing (PIA) conditions are studied in order to optimize the luminescence properties of the nanoparticles. Ion energies between 15 and 70 keV, fluences up to 1017 atoms/cm2, and target temperatures ranging from room temperature to 600 ºC are employed. The PIA process is carried out at temperatures between 1000 and 1200 °C in ambient nitrogen, or argon gas. In addition, dangling bonds, which reduce the total luminescence of SiNPs, are passivated, using forming gas annealing (FGA). Quantification of hydrogen content induced by FGA process is performed by ion beam analysis (IBA) techniques. Furthermore, irradiations with swift heavy ions (SHIs) with several tens of MeV kinetic energy are performed as a possible way to further reduce the defect density. In particular, the relation between electronic and nuclear stopping for the defect production and annealing is investigated. The composition and physical structure of the samples are studied via IBA techniques, transmission electron microscopy (TEM), and grazing incidence X-ray diffraction (GIXRD). Based on the results from IBA, the implantation profiles are reconstructed. The physical structures of SiNPs revealed by TEM and GIXRD, furthermore, show that the high fluence implantation with an adequate PIA condition leads to the formation of crystalline SiNPs with a mean size of about 6 nm. The optical properties of SiNPs are characterized by photoluminescence (PL) techniques. After the implantation, only defect PL is present, but it is found that intense SiNP PL can be achieved for samples implanted with 15 atomic% excess peak concentration of Si in SiO2 and PIA at 1100 °C in argon gas for 90 minutes. Finally, an alternative way for fabricating SiNPs in SiO2 is tested, using oxygen implantation into a Si wafer. Although the PL from this experiment is less intense than the PL of SiNPs fabricated by the Si-implanted SiO2 route, the results are technologically interesting due to the convenience of the process.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2018. p. 74
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1651
Keywords
Silicon nanoparticle, Photoluminescence, Ion beam synthesis, Ion beam analysis
National Category
Physical Sciences
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-346932 (URN)978-91-513-0287-4 (ISBN)
Public defence
2018-05-08, Å80101, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:00 (English)
Opponent
Supervisors
Available from: 2018-04-12 Created: 2018-03-22 Last updated: 2018-04-25

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Chulapakorn, ThawatchartPrimetzhofer, Daniel

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