uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Cd and Cu Interdiffusion in Cu(In, Ga) Se-2/CdS Hetero-Interfaces
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal..
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil..
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 3, 858-863 p.Article in journal (Refereed) Published
Abstract [en]

We report a detailed characterization of an industrylike prepared Cu(In, Ga) Se-2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. Vol. 7, no 3, 858-863 p.
Keyword [en]
CdS, Cu(In, Ga) Se-2 (CIGS), diffusion, solar cells, thin films, transmission electron microscopy (TEM)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-322689DOI: 10.1109/JPHOTOV.2017.2666550ISI: 000399992000019OAI: oai:DiVA.org:uu-322689DiVA: diva2:1099123
Available from: 2017-05-29 Created: 2017-05-29 Last updated: 2017-05-29Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Keller, JanTörndahl, TobiasEdoff, Marika

Search in DiVA

By author/editor
Keller, JanTörndahl, TobiasEdoff, Marika
By organisation
Solid State Electronics
In the same journal
IEEE Journal of Photovoltaics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 263 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf