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Modelling of single-crystal diamond Schottky diodes for high-voltage applications
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK.
Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK.
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
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2006 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 15, 317-323 p.Article in journal, Meeting abstract (Refereed) Published
Abstract [en]

The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.

Place, publisher, year, edition, pages
2006. Vol. 15, 317-323 p.
Keyword [en]
Diamond, Electronic Devices, Numerical Modelling
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Science of Electricity
Identifiers
URN: urn:nbn:se:uu:diva-82072DOI: 10.1016/j.diamond.2005.06.019ISI: 000236440300030OAI: oai:DiVA.org:uu-82072DiVA: diva2:109987
Available from: 2006-09-15 Created: 2006-09-15 Last updated: 2017-12-14Bibliographically approved

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Isberg, Jan

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