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Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se2 solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin film solar cells)ORCID iD: 0000-0002-3162-4292
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2017 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, 235-238 p.Article in journal (Refereed) Published
Abstract [en]

We studied the interaction of four different window layer combinations in Cu(In,Ga)Se solar cells. Intrinsic ZnO (i-ZnO) layers were grown on CdS by either chemical vapor deposition (CVD) or magnetron sputtering. These were combined with sputtered ZnO:Al or In O :H grown by atomic layer deposition as transparent conducting oxides (TCO). It was found that the thickness of the CVD i-ZnO layer affects the open circuit voltage (V ) significantly when using In O :H as TCO. The V dropped by roughly 30mV when the i-ZnO thickness was increased from 20 to 160nm. This detrimental effect on V was not as prominent when a ZnO:Al TCO was used, where the corresponding decrease was in the range of 5 to 10mV. In addition, the V drop for the CVD i-ZnO/In O :H structure was not observed when using the sputtered i-ZnO layer. Furthermore, large fill factor variations were observed when using the In O :H TCO without an i-ZnO layer underneath, where already a thin (20nm) CVD i-ZnO layer mitigated this effect. Device simulations were applied to explain the experimentally observed V trends.

Place, publisher, year, edition, pages
2017. Vol. 633, 235-238 p.
Keyword [en]
Atomic layer deposition; Zinc oxide; Indium oxide; Transparent conducting oxide; Copper indium gallium selenide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-324650OAI: oai:DiVA.org:uu-324650DiVA: diva2:1110756
Available from: 2017-06-16 Created: 2017-06-16 Last updated: 2017-06-19

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