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Structure and Conductivity of Epitaxial Thin Films of In-Doped BaZrO3-Based Proton Conductors
Chalmers, Dept Phys, SE-41296 Gothenburg, Sweden.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.ORCID iD: 0000-0002-7517-8204
Paul Scherrer Inst, Energy & Environm Res Div, CH-5232 Villigen, Switzerland..
NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA..ORCID iD: 0000-0001-6877-959X
Show others and affiliations
2016 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 120, no 50, 28415-28422 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial thin films of the proton-conducting perovskite BaZr0.53In0.47O3-delta H0.47-2 delta, grown by pulsed laser deposition, were investigated in their hydrated and dehydrated conditions through a multitechniqu approach with the aim to study the structure and proton concentration depth profile and their relationship to proton conductivity. The techniques used were X-ray diffraction, X-ray and neutron reflectivity, nuclear reaction analysis, and Rutherford backscattering, together with impedance spectroscopy. The obtained proton conductivity and activation energy are comparable to literature values for the bulk conductivity of similar materials, thus showing that grain-boundary conductivity is negligible due to the high crystallinity of the film. The results reveal an uneven proton concentration depth profile, with the presence of a 3-4 nm thick, proton-rich layer with altered composition, likely characterized by cationic deficiency. While this surface layer either retains or reobtains protons after desorption and cooling to room temperature, the bulk of the film absorbs and desorbs protons in the expected mariner. It is suggested that the protons in the near-surface, proton rich region are located in proton sites characterized by relatively strong O-H bonds due to weak hydrogen-bond interactions to neighboring oxygen atoms and that the mobility of protons in these sites is generally lower than in proton sites associated with stronger hydrogen bonds. It follows that strongly hydrogen-bonding configurations are important for high proton mobility.

Place, publisher, year, edition, pages
2016. Vol. 120, no 50, 28415-28422 p.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-324500DOI: 10.1021/acs.jpcc.6b08570ISI: 000390735600005OAI: oai:DiVA.org:uu-324500DiVA: diva2:1110857
Funder
Swedish Research Council, 2008-6654Swedish Research Council, 2010-3519Swedish Foundation for Strategic Research , ICAIO-0001
Available from: 2017-06-16 Created: 2017-06-16 Last updated: 2017-06-16Bibliographically approved

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