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The behaviour of Na implanted into Mo thin films during annealing
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1999 (English)In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 58, no 2, 199-208 p.Article in journal (Refereed) Published
Abstract [en]

Na implants have been used to study diffusion of Na in rf diode sputtered Mo thin films used as back contacts for Cu(In,Ga)Se, solar cells. The samples were analysed with secondary ion mass spectrometry before and after vacuum anneals at 420 degrees C and

Place, publisher, year, edition, pages
1999. Vol. 58, no 2, 199-208 p.
Keyword [en]
Mo; Na; CIGS thin film solar cells
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-84635OAI: oai:DiVA.org:uu-84635DiVA: diva2:112543
Note
Addresses: Bodegard M, Uppsala Univ, Angstrom Solar Ctr, POB 534, SE-75121 Uppsala, Sweden. Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden. Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA.Available from: 2007-02-28 Created: 2007-02-28 Last updated: 2011-01-14

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Stolt, Lars

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