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High precision crystallographic alignment of InP(100)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Materialvetenskap.
1999 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 2, no 8, 407-408 p.Article in journal (Refereed) Published
Abstract [en]

The precise crystallographic orientation of InP wafers is revealed using a crystalign pattern that is etched for a short time. A device pattern can then be aligned to the manifested direction. Alignment of V-grooves for precise cleaving of side emitting lasers is demonstrated with a precision of 0.063°

Place, publisher, year, edition, pages
1999. Vol. 2, no 8, 407-408 p.
Keyword [en]
MASK; ORIENTATION
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-84638DOI: 10.1149/1.1390853OAI: oai:DiVA.org:uu-84638DiVA: diva2:112546
Note

Addresses: Vangbo M, Uppsala Univ, Angstrom Lab, SE-75221 Uppsala, Sweden. Uppsala Univ, Angstrom Lab, SE-75221 Uppsala, Sweden.

Available from: 2007-02-28 Created: 2007-02-28 Last updated: 2017-12-14

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Publisher's full texthttp://esl.ecsdl.org/content/2/8/407.abstract

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Karlsson, MikaelHjort, Klas

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