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Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science.
1999 (English)In: SOLID-STATE ELECTRONICS, ISSN 0038-1101, Vol. 43, no 4, 697-700 p.Article in journal (Other scientific) Published
Abstract [en]

An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate volta

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 1999. Vol. 43, no 4, 697-700 p.
Keyword [en]
1/F NOISE; TRANSISTORS; QUALITY; DEVICES; MOS
Identifiers
URN: urn:nbn:se:uu:diva-84641OAI: oai:DiVA.org:uu-84641DiVA: diva2:112549
Note
Addresses: Vandamme LKJ, Eindhoven Univ Technol, Dept Elect Engn, POB 513, NL-5600 MB Eindhoven, Netherlands. Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands. Univ Uppsala, Dept Mat Sci, Angstrom Lab, S-75121 Uppsala, Sweden.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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