Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation
1999 (English)In: SOLID-STATE ELECTRONICS, ISSN 0038-1101, Vol. 43, no 4, 697-700 p.Article in journal (Other scientific) Published
An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate volta
Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 1999. Vol. 43, no 4, 697-700 p.
1/F NOISE; TRANSISTORS; QUALITY; DEVICES; MOS
IdentifiersURN: urn:nbn:se:uu:diva-84641OAI: oai:DiVA.org:uu-84641DiVA: diva2:112549
Addresses: Vandamme LKJ, Eindhoven Univ Technol, Dept Elect Engn, POB 513, NL-5600 MB Eindhoven, Netherlands. Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands. Univ Uppsala, Dept Mat Sci, Angstrom Lab, S-75121 Uppsala, Sweden.2008-10-172008-10-172011-01-14