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The chemical bath deposited CdS/Cu(In,Ga)Se-2 interface as revealed by X-ray photoelectron spectroscopy
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1999 (English)In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 146, no 5, 1816-1823 p.Article in journal (Refereed) Published
Abstract [en]

The highest efficiencies of Cu(In,Ga)Se-2 thin-film solar cells have been achieved when incorporating a CdS buffer layer grown by chemical bath deposition (CBD). To elucidate the specific properties of the CBD-CdS/Cu(In,Ga)Se-2 interface, device-quality C

Place, publisher, year, edition, pages
1999. Vol. 146, no 5, 1816-1823 p.
Keyword [en]
CDS THIN-FILMS; SOLAR-CELLS; IMPURITY; XPS
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-84642OAI: oai:DiVA.org:uu-84642DiVA: diva2:112550
Note
Addresses: Kylner A, SAAB Ericsson Space AB, SE-40515 Gothenburg, Sweden. Uppsala Univ, Angstrom Lab, Dept Mat Sci, SE-75121 Uppsala, Sweden.Available from: 2007-02-28 Created: 2007-02-28 Last updated: 2011-01-14

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