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Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H-2 process - I. Adsorption of CuCl on Cu(111)
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
1998 (English)In: APPLIED SURFACE SCIENCE, ISSN 0169-4332, Vol. 136, no 1-2, 137-146 p.Article in journal (Other scientific) Published
Abstract [en]

An ab initio investigation of the adsorption and disproportionation of copper(I)chloride on copper(111), two crucial processes in CuCl/H-2 copper Atomic Layer Epitaxy is presented. Adsorption of CuCl is energetically most favourable on the two different t

Place, publisher, year, edition, pages
1998. Vol. 136, no 1-2, 137-146 p.
Keyword [en]
adsorption; density functional calculations; copper; copper(I)chloride; THIN-FILMS; DISSOCIATIVE ADSORPTION; TANTALUM OXIDE; GROWTH; H-2; SURFACES; ENERGY; DEPOSITION; DESORPTION; DYNAMICS
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-84675OAI: oai:DiVA.org:uu-84675DiVA: diva2:112583
Note
Addresses: Karin Larsson, Angstrom Lab, Dept of materials Chemistry, Box 538, SE-75121 Uppsala, Sweden. Angstrom Lab, SE-75121 Uppsala, Sweden.Available from: 2006-10-19 Created: 2006-10-19 Last updated: 2011-01-14

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Larsson, KarinCarlsson, Jan-Otto

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