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Composition control by current modulation in dc-reactive sputtering
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1998 (English)In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. A16, no 3, 1868-1872 p.Article in journal (Refereed) Published
Abstract [en]

Control of the reactive sputtering process can be carried out by controlling either the flow of the reactive gas or the power supplied to the target. In the flow control mode it is well known that the reactive sputter deposition process exhibits a pronoun

Place, publisher, year, edition, pages
1998. Vol. A16, no 3, 1868-1872 p.
Keyword [en]
DEPOSITION; FILM
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-84694OAI: oai:DiVA.org:uu-84694DiVA: diva2:112602
Note
Addresses: Nyberg T, Univ Uppsala, Angstrom Lab, S-75121 Uppsala, Sweden. Univ Uppsala, Angstrom Lab, S-75121 Uppsala, Sweden.Available from: 2007-03-01 Created: 2007-03-01 Last updated: 2011-01-14

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Nyberg, TomasBerg, Sören

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