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Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1999 (English)In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, no 5, 2122-2128 p.Other (Other scientific)
Abstract [en]

The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between copper and silicon were investigated. After deposition and a

Place, publisher, year, pages
AMER INST PHYSICS , 1999. Vol. 17, no 5, 2122-2128 p.
Keyword [en]
TIN THIN-FILMS; DIFFUSION BARRIER; COPPER; GROWTH; TITANIUM; CU
Identifiers
URN: urn:nbn:se:uu:diva-84831OAI: oai:DiVA.org:uu-84831DiVA: diva2:112739
Note
Addresses: Martensson P, Dept Inorgan Chem, Angstrom Lab, S-75121 Uppsala, Sweden. Dept Inorgan Chem, Angstrom Lab, S-75121 Uppsala, Sweden. Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland.Available from: 2008-10-17 Created: 2008-10-17

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