Deposition of epitaxial titanium carbide films on MgO(001) and 6H-SiC(0001) by coevaporation of Ti and C-60
1999 (English)In: Journal of Materials Research, Vol. 14, no 4, 1589-1596 p.Article in journal (Other scientific) Published
Epitaxial films of TiC1-x, (0.15 < x < 0.50) were deposited on MgO(001) and 6H-SiC(0001) at 250 and 400 degrees C by coevaporation of C-60 and Ti. Films deposited on MgO(001) were single-crystalline down to deposition temperatures of at least 250 degrees
Place, publisher, year, edition, pages
1999. Vol. 14, no 4, 1589-1596 p.
IdentifiersURN: urn:nbn:se:uu:diva-84839OAI: oai:DiVA.org:uu-84839DiVA: diva2:112747
Addresses: Univ Uppsala, Dept Inorgan Chem, Angstrom Lab, POB 538, S-75121 Uppsala, Sweden. Univ Lund, Natl Ctr HREM, Dept Inorgan Chem 2, S-22100 Lund, Sweden.2006-12-142006-12-142011-01-14