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Atomic layer epitaxy of tungsten oxide films using oxyfluorides as metal precursors
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
1999 (English)In: Journal of the Electrochemical Society, Vol. 146, no 8, p. 3139-3146Article in journal (Refereed) Published
Abstract [en]

Atomic layer epitaxy (ALE) of WO3 from WF6 and H2O has been studied. These precursors were found to yield very low deposition rates. This was attributed to a poor adsorption of WF6 on the oxide surface. Attempts to increase the adsorption of the metal so
Place, publisher, year, edition, pages
1999. Vol. 146, no 8, p. 3139-3146
Keywords [en]
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SURFACE-CHEMISTRY; GROWTH; SELECTIVITY; TANTALUM; KINETICS
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-84849OAI: oai:DiVA.org:uu-84849DiVA, id: diva2:112757
Note
Addresses: Uppsala univ., Dept Inorganic Chem, Angstrom Lab, POB 538 S-75121 Uppsala, Sweden.Available from: 2006-12-14 Created: 2006-12-14 Last updated: 2011-01-14

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Jansson, UlfCarlsson, Jan-Otto

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