Atomic layer epitaxy of tungsten oxide films using oxyfluorides as metal precursors
1999 (English)In: Journal of the Electrochemical Society, Vol. 146, no 8, 3139-3146 p.Article in journal (Refereed) Published
Atomic layer epitaxy (ALE) of WO3 from WF6 and H2O has been studied. These precursors were found to yield very low deposition rates. This was attributed to a poor adsorption of WF6 on the oxide surface. Attempts to increase the adsorption of the metal so
Place, publisher, year, edition, pages
1999. Vol. 146, no 8, 3139-3146 p.
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SURFACE-CHEMISTRY; GROWTH; SELECTIVITY; TANTALUM; KINETICS
IdentifiersURN: urn:nbn:se:uu:diva-84849OAI: oai:DiVA.org:uu-84849DiVA: diva2:112757
Addresses: Uppsala univ., Dept Inorganic Chem, Angstrom Lab, POB 538 S-75121 Uppsala, Sweden.2006-12-142006-12-142011-01-14