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Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
1997 (English)In: PHYSICAL REVIEW B-CONDENSED MATTER, ISSN 0163-1829, Vol. 55, no 16, 10498-10507 p.Article in journal (Other scientific) Published
Abstract [en]

Silicon samples of n-type have been implanted with low doses (10(7)-10(10) cm(-2)) of B-11, C-12, O-16, Si-28, Ge-74,Ge-76, and Sn-120 ions using energies between 0.4 and 8.0 MeV. Because of the low doses employed, single-collision cascades prevail, and a

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1997. Vol. 55, no 16, 10498-10507 p.
Keyword [en]
IRRADIATED SILICON; TRANSIENT SPECTROSCOPY; ELECTRON-IRRADIATION; DIVACANCY; DEPENDENCE; TRAPS; GE; TEMPERATURE; DAMAGE; FLUX
Identifiers
URN: urn:nbn:se:uu:diva-85545OAI: oai:DiVA.org:uu-85545DiVA: diva2:113453
Note
Addresses: Svensson BG, ROYAL INST TECHNOL, POB E229, S-16440 KISTA, SWEDEN. RES SCH PHYS SCI & ENGN, DEPT ELECT MAT ENGN, CANBERRA, ACT 0200, AUSTRALIA. UNIV UPPSALA, DEPT RADIAT SCI, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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