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Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden..
Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and Condensed Matter Physics. Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden.
Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA.;Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA.;Iowa State Univ, Mech Engn Dept, Ames, IA 50011 USA..
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2017 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 11, no 6, 6389-6395 p.Article in journal (Refereed) Published
Abstract [en]

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (similar to 7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2017. Vol. 11, no 6, 6389-6395 p.
Keyword [en]
spin-polarized tunneling, multilayer MoS2, 2D semiconductor, tunnel magnetoresistance, density functional theory
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-330748DOI: 10.1021/acsnano.7b02819ISI: 000404808000123PubMedID: 28557439OAI: oai:DiVA.org:uu-330748DiVA: diva2:1147397
Funder
Swedish Research Council, 2016-03658
Available from: 2017-10-05 Created: 2017-10-05 Last updated: 2017-10-05Bibliographically approved

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Kamalakar, M. Venkata

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