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Influence of Swift Heavy Ion Irradiation on the Photoluminescence of Si-nanoparticles and Defects in SiO2
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics. (Ion Physics)ORCID iD: 0000-0001-7229-6857
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
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2017 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 28, no 37, article id 375603Article in journal (Refereed) Published
Abstract [en]

The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 28, no 37, article id 375603
Keywords [en]
silicon nanoparticle, ion implantation, photoluminescence, swift heavy ion irradiation
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-330535DOI: 10.1088/1361-6528/aa824fISI: 000408244000002OAI: oai:DiVA.org:uu-330535DiVA, id: diva2:1148026
Funder
Swedish Foundation for Strategic Research , RIF14-0053Swedish Research CouncilAvailable from: 2017-10-09 Created: 2017-10-09 Last updated: 2018-03-22
In thesis
1. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
Open this publication in new window or tab >>Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. In this thesis, silicon nanoparticles are formed in thermally grown SiO2 films by implantation of Si-ions. Implantation parameters such as energy, fluence, and target temperature, as well as post-implantation annealing (PIA) conditions are studied in order to optimize the luminescence properties of the nanoparticles. Ion energies between 15 and 70 keV, fluences up to 1017 atoms/cm2, and target temperatures ranging from room temperature to 600 ºC are employed. The PIA process is carried out at temperatures between 1000 and 1200 °C in ambient nitrogen, or argon gas. In addition, dangling bonds, which reduce the total luminescence of SiNPs, are passivated, using forming gas annealing (FGA). Quantification of hydrogen content induced by FGA process is performed by ion beam analysis (IBA) techniques. Furthermore, irradiations with swift heavy ions (SHIs) with several tens of MeV kinetic energy are performed as a possible way to further reduce the defect density. In particular, the relation between electronic and nuclear stopping for the defect production and annealing is investigated. The composition and physical structure of the samples are studied via IBA techniques, transmission electron microscopy (TEM), and grazing incidence X-ray diffraction (GIXRD). Based on the results from IBA, the implantation profiles are reconstructed. The physical structures of SiNPs revealed by TEM and GIXRD, furthermore, show that the high fluence implantation with an adequate PIA condition leads to the formation of crystalline SiNPs with a mean size of about 6 nm. The optical properties of SiNPs are characterized by photoluminescence (PL) techniques. After the implantation, only defect PL is present, but it is found that intense SiNP PL can be achieved for samples implanted with 15 atomic% excess peak concentration of Si in SiO2 and PIA at 1100 °C in argon gas for 90 minutes. Finally, an alternative way for fabricating SiNPs in SiO2 is tested, using oxygen implantation into a Si wafer. Although the PL from this experiment is less intense than the PL of SiNPs fabricated by the Si-implanted SiO2 route, the results are technologically interesting due to the convenience of the process.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2018. p. 74
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1651
Keywords
Silicon nanoparticle, Photoluminescence, Ion beam synthesis, Ion beam analysis
National Category
Physical Sciences
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-346932 (URN)978-91-513-0287-4 (ISBN)
Public defence
2018-05-08, Å80101, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:00 (English)
Opponent
Supervisors
Available from: 2018-04-12 Created: 2018-03-22 Last updated: 2018-04-25

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