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Surface modification through air annealing Cu2ZnSn(S,Se)4 absorbers
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0002-0501-8969
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Univ Oslo, Ctr Mat Sci & Nanotechnol, Box 1126, N-0318 Oslo, Norway..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2017 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, 118-121 p.Article in journal (Refereed) Published
Abstract [en]

Recent studies demonstrate that air annealing can have a positive effect on the device performance of Cu2ZnSn(SxSe1-x)(4)[CZTSSe] solar cells. In this work air annealing of the selenium containing CZTSSe is compared to the pure sulfide CZTS. It is discovered that the selenium containing absorbers benefit from air annealing at higher temperatures than selenium free absorbers. The highest efficiency obtained utilizing the air annealing treatment on selenium containing absorbers is 9.7%. We find that the band gap is narrowed when air annealing, which is partially explained by increased Cu-Zn disorder. Furthermore Zn enrichment of the surface after etching is identified as a possible cause of enhanced device performance. It is additionally observed that elemental selenium present on the CZTSSe surface is reduced in the air annealing treatment. Selenium removal is another possible explanation for the enhanced performance caused by the air annealing treatment.

Place, publisher, year, edition, pages
2017. Vol. 633, 118-121 p.
Keyword [en]
CZTS, Kesterite, Thin film solar cells, Surface modification, Passivation
National Category
Materials Engineering Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-330018DOI: 10.1016/j.tsf.2016.08.030ISI: 000404802300023OAI: oai:DiVA.org:uu-330018DiVA: diva2:1148461
Conference
Symposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting, MAY 02-06, 2016, Lille, FRANCE
Note

Surface modification through air annealing Cu2ZnSn(S,Se)(4) absorbers

Available from: 2017-10-11 Created: 2017-10-11 Last updated: 2017-10-11Bibliographically approved

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Larsen, Jes KRen, YiRoss, NilsSärhammar, ErikPlatzer Björkman, Charlotte

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