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Excitation spectra of defect levels derived from photoinduced current transient spectroscopy - a tool for studying deep levels in Cu(In,Ga)Se2 compounds
Warsaw Univ Technol, Fac Phys, Koszykowa 79, PL-00662 Warsaw, Poland..
Warsaw Univ Technol, Fac Phys, Koszykowa 79, PL-00662 Warsaw, Poland..
Warsaw Univ Technol, Fac Phys, Koszykowa 79, PL-00662 Warsaw, Poland..
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere,BP 32229, F-44322 Nantes 3, France..
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2017 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, no SI, 227-230 p.Article in journal (Refereed) Published
Abstract [en]

Energy required for the optical excitation of carriers onto defect levels is a parameter that compliments thermal activation energy and helps to understand the electronic properties of defects under study. Here a modification of the photoinduced current transient spectroscopy (PICTS) based on phase-sensitive detection is proposed which makes possible to measure the excitation spectra of defect levels. The representative results of the excitation spectra of the epitaxial CuGaSe2 and polycrystalline Cu(In,Ga)Se2 thin films are presented. They illustrate the usefulness of the method as a tool for studying defect properties by providing data that supplement information derived from standard PICTS spectroscopy.

Place, publisher, year, edition, pages
2017. Vol. 633, no SI, 227-230 p.
Keyword [en]
Defect levels, Copper indium gallium selenide, Photocurrent, Photoinduced current transient spectroscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-330019DOI: 10.1016/j.tsf.2016.11.046ISI: 000404802300043OAI: oai:DiVA.org:uu-330019DiVA: diva2:1149108
Conference
Symposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting, MAY 02-06, 2016, Lille, FRANCE
Available from: 2017-10-13 Created: 2017-10-13 Last updated: 2017-10-13Bibliographically approved

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Larsen, Jes K

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