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Influence of CdS and ZnxSn1-xOy Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal..
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2016 (English)In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), New York: IEEE, 2016, 3068-3071 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited ZnxSn1xOy (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.

Place, publisher, year, edition, pages
New York: IEEE, 2016. 3068-3071 p.
Series
IEEE Photovoltaic Specialists Conference, ISSN 0160-8371 ; 43
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-331389DOI: 10.1109/PVSC.2016.7750228ISI: 000399818703021ISBN: 978-1-5090-2724-8 (electronic)OAI: oai:DiVA.org:uu-331389DiVA: diva2:1149225
Conference
43rd IEEE Photovoltaic Specialists Conference (PVSC), JUN 05-10, 2016, Portland, OR
Available from: 2017-10-13 Created: 2017-10-13 Last updated: 2017-10-13Bibliographically approved

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