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Effect of oxygen partial pressure on the density of antiphase boundaries in Fe3O4 thin films on Si(100)
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
2017 (English)In: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, E-ISSN 1873-4766Article in journal (Refereed) In press
Abstract [en]

Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at different oxygen partial pressures PO2 for controlling the growth associated density of antiphase boundaries (APBs). The micro-Raman analyses were performed to study the structural and electronic properties in these films. The growth linked changes in the APBs density are probed by electron–phonon coupling strength (λ) and isothermal magnetization measurements. The estimated values of λ are found to vary from 0.39 to 0.56 with the increase in PO2 from 2.2 × 10−5 to 3.0 × 10−5 Torr, respectively. The saturation magnetization (saturation field) values are found to increase (decrease) from 394 (5.9) to 439 (3.0) emu/cm3 (kOe) with the increase in PO2. The sharp Verwey transition (∼120 K), low saturation field, high saturation magnetization and low value of λ (comparable to the bulk value ∼0.51) clearly affirm the negligible amount of APBs in the high oxygen partial pressure deposited thin films.

Place, publisher, year, edition, pages
Elsevier, 2017.
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Physical Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-332479DOI: 10.1016/j.jmmm.2017.07.082OAI: oai:DiVA.org:uu-332479DiVA: diva2:1153190
Available from: 2017-10-27 Created: 2017-10-27 Last updated: 2017-11-01

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Publisher's full texthttps://doi.org/10.1016/j.jmmm.2017.07.082

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