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Microwave annealing as a low thermal budget technique for ZnO thin-film transistors fabricated using atomic layer deposition
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2017 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 38, p. 1390-1393Article in journal (Refereed) Published
Abstract [en]

Microwave annealing (MWA) and furnace annealing are compared for their low thermal budget capability to improve the characteristics of ZnO-based thin-film transistors (TFTs). Both the ZnO channel and the Al2O3 gate dielectric are fabricated using atomic layer deposition. Using Si-wafer-susceptor assisted MWA with a substantial reduction of both annealing temperature and duration, significant improvements of the characteristics of the ZnO TFTs can be attained. A multi-step MWA process is found to further improve the characteristics of the TFTs. For the same microwave power and total duration, the field-effect mobility of the multi-step MWA TFT is 42% greater than that of the one-step MWA TFT with a similar sub-threshold swing. The multi-step MWA process can serve the purpose at temperatures as low as 220 degrees C.

Place, publisher, year, edition, pages
2017. Vol. 38, p. 1390-1393
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-332717DOI: 10.1109/LED.2017.2740221ISI: 000413760600009OAI: oai:DiVA.org:uu-332717DiVA, id: diva2:1153911
Available from: 2017-10-31 Created: 2017-10-31 Last updated: 2018-04-11Bibliographically approved

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Zhang, Shi-Li

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