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Record 1.0 V open-circuit voltage in wide band gap chalcopyrite solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2017 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 25, 755-763 p.Article in journal (Refereed) Published
Abstract [en]

Tandem solar cell structures require a high‐performance wide band gap absorber as top cell. Apossible candidate is CuGaSe2, with a fundamental band gap of 1.7 eV. However, a significantopen‐circuit voltage deficit is often reported for wide band gap chalcopyrite solar cells likeCuGaSe2. In this paper, we show that the open‐circuit voltage can be drastically improved in wideband gap p‐Cu(In,Ga)Se2and p‐CuGaSe2devices by improving the conduction band alignment tothe n‐type buffer layer. This is accomplished by using Zn1−xSnxOy, grown by atomic layer deposi-tion, as a buffer layer. In this case, the conduction band level can be adapted to an almost perfectfit to the wide band gap Cu(In,Ga)Se2and CuGaSe2materials. With an improved buffer bandalignment for CuGaSe2absorbers, evaporated in a 3‐stage type process, we show devicesexhibiting open‐circuit voltages up to 1017 mV, and efficiencies up to 11.9%. This is to the bestof our knowledge the highest reported open‐circuit voltage and efficiency for a CuGaSe2device.Temperature‐dependent current‐voltage measurements show that the high open‐circuit voltageis explained by reduced interface recombination, which makes it possible to separate theinfluence of absorber quality from interface recombination in future studies.

Place, publisher, year, edition, pages
2017. Vol. 25, 755-763 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-332821DOI: 10.1002/pip.2914OAI: oai:DiVA.org:uu-332821DiVA: diva2:1154275
Available from: 2017-11-02 Created: 2017-11-02 Last updated: 2017-11-06

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Larsson, FredrikShariati-Nilsson, NinaKeller, JanFrisk, ChristopherKosyak, VolodymyrEdoff, MarikaTörndahl, Tobias
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