uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Solibro research.
Solibro research.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Show others and affiliations
2017 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, 1-11 p.Article in journal (Refereed) Published
Abstract [en]

This contribution studies the impact of the KF-induced Cu(In,Ga)Se2 (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In2O3:H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor (FF) for temperatures >150°C. The FF losses are accompanied by a reduction in open circuit voltage (Voc) that might originate from a decreased apparent doping density (Nd,app) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)-In-Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well-designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF-PDT) was applied.

Place, publisher, year, edition, pages
2017. 1-11 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-332827DOI: 10.1002/pip.2925OAI: oai:DiVA.org:uu-332827DiVA: diva2:1154283
Available from: 2017-11-02 Created: 2017-11-02 Last updated: 2017-11-06

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Keller, JanAijaz, AsimKubart, TomasRiekehr, LarsEdoff, MarikaStolt, LarsTörndahl, Tobias
By organisation
Solid State Electronics
In the same journal
Progress in Photovoltaics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 20 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf