uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Univ Lorraine, ICPM, Inst Jean Barriol, LCP A2MC, 1 Bd Arago, F-57078 Metz, France..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0001-8686-8721
Univ Utah, Mat Sci & Engn, Salt Lake City, UT 84112 USA.;Univ Utah, Elect & Comp Engn, Salt Lake City, UT 84112 USA..
Show others and affiliations
2017 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 122, no 3, 035707Article in journal (Refereed) Published
Abstract [en]

Herein, we study the native point defect equilibrium in Cu2ZnSnS4 (CZTS) by applying a statistical thermodynamic model. The stable chemical- potential space (SCPS) of CZTS at an elevated temperature was estimated directly, on the basis of deviations from stoichiometry calculated for the different combinations of chemical potential of the components. We show that the SCPS is narrow due to high concentration of (V-Cu(-) Zn-Cu(+)) complex which is dominant over other complexes and isolated defects. The CZTS was found to have p-type conductivity for both stoichiometric and Cu-poor/Zn-rich composition. It is established that the reason for this is that the majority of donor-like Zn-Cu(+) antisites are involved in the formation of (V-Cu(-) Zn-Cu(+)) complex making Cu-Zn dominant and providing p- type conductivity even for Cu-poor/Zn-rich composition. However, our calculation reveals that the hole concentration is almost insensitive to the variation of the chemical composition within the composition region of the single-phase CZTS due to nearly constant concentration of dominant charged defects. The calculations for the full equilibrium and quenching indicate that hole concentration is strongly dependent on the annealing temperature and decreases substantially after the drastic cooling. This means that the precise control of annealing temperature and post-annealing cooling rate are critical for tuning the electrical properties of CZTS.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2017. Vol. 122, no 3, 035707
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-332848DOI: 10.1063/1.4994689ISI: 000406128800046OAI: oai:DiVA.org:uu-332848DiVA: diva2:1155708
Funder
Swedish Research Council
Available from: 2017-11-09 Created: 2017-11-09 Last updated: 2017-11-14Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Kosyak, VolodymyrScragg, Jonathan J.Platzer Björkman, Charlotte

Search in DiVA

By author/editor
Kosyak, VolodymyrScragg, Jonathan J.Platzer Björkman, Charlotte
By organisation
Solid State Electronics
In the same journal
Journal of Applied Physics
Physical SciencesEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf