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Critical behavior of the resistivity of GaMnAs near the Curie temperature
Dongguk University, Nano-Information Technology Academy (NITA).
Dongguk University, Nano-Information Technology Academy (NITA).
Dongguk University, Quantum-Functional Semiconductor Research Center.
Korea University, Department of Physics.
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2017 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 263, 38-41 p.Article in journal (Refereed) Published
Abstract [en]

The effect of the magnetization fluctuations on the resistivity of GaMnAs near the Curie temperature T-C was experimentally studied. It is shown that the determination of T-C from the maximum of the temperature derivative of the resistivity is valid for the samples with a high concentration of free carries. Whereas, for the samples with low concentration of free carriers the T-C coincides with the resistivity maximum. The magnetic specific heat for T > T-C demonstrates the crossover from the one dimensional to the three dimensional critical behavior when the temperature become closer to the Curie temperature. This is explained by the formation of the ferromagnetic phase in the paramagnetic side of the phase transition which is started from Mn-Mn dimers oriented along one direction.

Place, publisher, year, edition, pages
2017. Vol. 263, 38-41 p.
Keyword [en]
GaMnAs, Diluted magnetic semiconductor, Phase transition, Critical behavior
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-335749DOI: 10.1016/j.ssc.2017.07.005ISI: 000410842900008OAI: oai:DiVA.org:uu-335749DiVA: diva2:1163814
Available from: 2017-12-08 Created: 2017-12-08 Last updated: 2017-12-08Bibliographically approved

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Ahuja, Rajeev

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