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Electronic Stopping of Slow Protons in Oxides: Scaling Properties
Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria..
Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria..
Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
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2017 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 119, no 16, article id 163401Article in journal (Refereed) Published
Abstract [en]

Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

Place, publisher, year, edition, pages
2017. Vol. 119, no 16, article id 163401
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Subatomic Physics
Identifiers
URN: urn:nbn:se:uu:diva-339748DOI: 10.1103/PhysRevLett.119.163401ISI: 000413374900001OAI: oai:DiVA.org:uu-339748DiVA, id: diva2:1177571
Funder
Swedish Foundation for Strategic Research , RIF14-0053Available from: 2018-01-25 Created: 2018-01-25 Last updated: 2018-01-25Bibliographically approved

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Paneta, ValentinaPrimetzhofer, Daniel

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