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Bipolar integrated circuits in SiC for extreme environment operation
KTH Royal Inst Technol, Stockholm, Sweden..ORCID iD: 0000-0001-8108-2631
KTH Royal Inst Technol, Stockholm, Sweden..
KTH Royal Inst Technol, Stockholm, Sweden..
KTH Royal Inst Technol, Stockholm, Sweden..
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2017 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, no 3, article id 034002Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 degrees C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

Place, publisher, year, edition, pages
2017. Vol. 32, no 3, article id 034002
Keyword [en]
SiC, integrated circuit, high temperature, radiation hardness, bipolar technology
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-340169DOI: 10.1088/1361-6641/aa59a7ISI: 000413488700001OAI: oai:DiVA.org:uu-340169DiVA, id: diva2:1179029
Funder
Swedish Foundation for Strategic Research
Available from: 2018-01-31 Created: 2018-01-31 Last updated: 2018-01-31Bibliographically approved

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Mardani, ShabnamNorström, Hans

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