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A reference-less semiconductor ion sensor
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
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2018 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 254, p. 102-109Article in journal (Refereed) Published
Abstract [en]

Ion sensing represents a grand research field with tremendous challenges and ample opportunities. A proper operation of ion sensors demands a robust reference electrode (RE), but on-chip integration of a conventional liquid-filled RE is incompatible with semiconductor technology for manufacturing ion-sensitive field-effect transistors as electronic sensors. Here, we demonstrate a reference-less semiconductor ion sensor, RELESIS, that integrates an interdigitated electrode (IDE) with a field-effect transistor. As a constant solution potential is no longer necessary, the use of RELESIS eliminates the need of any RE in ion sensing. The evaluated IDE comprises two intertwined metallic combs, each being covered with a specific sensing layer. One of the combs is connected to the transistor for readout while another is biased with a voltage signal source. Our extensive measurement results with pH sensing confirm that the sensitivity of RELESIS is exclusively determined by the sensitivity difference of the two sensing layers. By eliminating bulky REs, the RELESIS may find myriad ion-sensing applications owing to its miniaturisability, integrability, flexibility and cost advantages.

Place, publisher, year, edition, pages
2018. Vol. 254, p. 102-109
Keywords [en]
Reference less, Ion sensor, Site binding model, Electrical double layer, Sensitivity difference, Semiconductor
National Category
Chemical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-341969DOI: 10.1016/j.snb.2017.06.152ISI: 000413308000014OAI: oai:DiVA.org:uu-341969DiVA, id: diva2:1183867
Funder
Swedish Research Council, 621-2014-5591; 621-2014-6300Available from: 2018-02-19 Created: 2018-02-19 Last updated: 2018-02-27Bibliographically approved

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Zhang, Shi-Li

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