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Electronic structure of ferromagnetic heavy fermion, YbPdSi, YbPdGe, and YbPtGe studied by photoelectron spectroscopy, x-ray emission spectroscopy, and DFT plus DMFT calculations
RIKEN SPring 8 Ctr, Sayo, Hyogo 6795148, Japan..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan..
Natl Def Acad Japan, Dept Appl Phys, 1-10-20 Yokosuka, Yokosuka, Kanagawa 2398686, Japan..
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2017 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 29, no 47, article id 475502Article in journal (Refereed) Published
Abstract [en]

Electronic structures of ferromagnetic heavy fermion Yb compounds of YbPdSi, YbPdGe, and YbPtGe are studied by photoelectron spectroscopy around the Yb 4d-4f resonance, resonant x-ray emission spectroscopy at the Yb L-3 absorption edge, and density functional theory combined with dynamical mean field theory calculations. These compounds all have a temperature-independent intermediate Yb valence with large Yb3+ and small Yb2+ components. The magnitude of the Yb valence is evaluated to be YbPtGe < YbPdGe less than or similar to YbPdSi, suggesting that YbPtGe is the closest to the quantum critical point among the three Yb compounds. Our results support the scenario of the coexistence of heavy fermion behavior and ferromagnetic ordering which is described by a magnetically-ordered Kondo lattice where the magnitude of the Kondo effect and the RKKY interaction are comparable.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 29, no 47, article id 475502
Keywords [en]
ferromagnetic heavy fermion, photoelectron spectroscopy, x-ray emission spectroscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-342474DOI: 10.1088/1361-648X/aa8b98ISI: 000422688700001PubMedID: 28891807OAI: oai:DiVA.org:uu-342474DiVA, id: diva2:1184371
Available from: 2018-02-21 Created: 2018-02-21 Last updated: 2018-02-21Bibliographically approved

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Thunström, Patrik

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