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Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering
KTH Royal Inst Technol, Mat Phys, Electrum 229, SE-16440 Kista, Sweden..
KTH Royal Inst Technol, Sch Informat & Commun Technol, Electrum 229, SE-16440 Kista, Sweden..
KTH Royal Inst Technol, Sch Informat & Commun Technol, Electrum 229, SE-16440 Kista, Sweden..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. KTH Royal Inst Technol, Sch Informat & Commun Technol, Electrum 229, SE-16440 Kista, Sweden.
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2017 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 50, no 49, article id 495111Article in journal (Refereed) Published
Abstract [en]

The formation of interfacial oxides during heat treatment of dielectric films on 4H-SiC has been studied. The 4H-SiC surface has been carefully prepared to create a clean and abrupt interface to Al2O3. An amorphous, 3 nm thick, Al2O3 film has been prepared on 4H-SiC by atomic layer deposition and rapid thermal annealing was then performed in N2O ambient at 700 degrees C and 1100 degrees C during 1 min. The samples were studied by time-of-flight medium energy ion scattering (ToF-MEIS), with sub-nanometer depth resolution and it is seen that, at both annealing temperatures, a thin SiOx (1 <= x <= 2) is formed at the interface. Our results further indicate that carbon remains in the silicon oxide in samples annealed at 700 degrees C. Additional electrical capacitance voltage measurements indicate that a large concentration of interface traps is formed at this temperature. After 1100 degrees C annealing, both MEIS and XRD measurements show that these features disappear, in accordance with electrical data.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 50, no 49, article id 495111
Keywords [en]
ALD, ToF-MEIS, 4H-SiC, Al2O3, interface
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-342652DOI: 10.1088/1361-6463/aa9431ISI: 000415834100006OAI: oai:DiVA.org:uu-342652DiVA, id: diva2:1186303
Available from: 2018-02-28 Created: 2018-02-28 Last updated: 2018-04-03Bibliographically approved

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Suvanam, Sethu Saveda

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