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Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal..
Univ Hasselt Partner Solliance, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium.;Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium.;Imomec Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium..
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil..
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal..
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2018 (English)In: Advanced Materials Interfaces, ISSN 2196-7350, Vol. 5, no 2, article id 1701101Article in journal (Refereed) Published
Abstract [en]

Thin film solar cells based in Cu(In,Ga)Se-2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.

Place, publisher, year, edition, pages
2018. Vol. 5, no 2, article id 1701101
Keywords [en]
Cu(In, Ga)Se-2 (CIGS), nanofabrication, passivation, photovoltaics, semiconductors, thin film solar cells
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-343670DOI: 10.1002/admi.201701101ISI: 000423173800013OAI: oai:DiVA.org:uu-343670DiVA, id: diva2:1188454
Part of project
ARCIGS-M
Funder
EU, Horizon 2020, 720887EU, European Research Council, 715027Available from: 2018-03-07 Created: 2018-03-07 Last updated: 2018-07-05Bibliographically approved

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The full text will be freely available from 2018-12-05 00:00
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Edoff, Marika

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