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Slow-muon study of quaternary solar-cell materials: Single layers and p-n junctions
Univ Coimbra, CFisUC, Dept Phys, R Larga, P-3004516 Coimbra, Portugal..
Univ Coimbra, CFisUC, Dept Phys, R Larga, P-3004516 Coimbra, Portugal..
Univ Coimbra, CFisUC, Dept Phys, R Larga, P-3004516 Coimbra, Portugal..
Univ Coimbra, CFisUC, Dept Phys, R Larga, P-3004516 Coimbra, Portugal..
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2018 (English)In: PHYSICAL REVIEW MATERIALS, ISSN 2475-9953, Vol. 2, no 2, article id 025402Article in journal (Refereed) Published
Abstract [en]

Thin films and p-n junctions for solar cells based on the absorber materials Cu(In, Ga) Se-2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu(+) state at the heterojunction interface as well as at the surface of the Cu(In, Ga)Se-2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2018. Vol. 2, no 2, article id 025402
National Category
Materials Engineering
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URN: urn:nbn:se:uu:diva-346665DOI: 10.1103/PhysRevMaterials.2.025402ISI: 000424511700004OAI: oai:DiVA.org:uu-346665DiVA, id: diva2:1191860
Available from: 2018-03-20 Created: 2018-03-20 Last updated: 2018-03-20Bibliographically approved

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Törndahl, Tobias

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