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Ion Beam Synthesis of Luminescent Silicon Nanoparticles
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics. (Ion Physics)ORCID iD: 0000-0001-7229-6857
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
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(English)Manuscript (preprint) (Other academic)
National Category
Natural Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:uu:diva-346918OAI: oai:DiVA.org:uu-346918DiVA, id: diva2:1192574
Available from: 2018-03-22 Created: 2018-03-22 Last updated: 2018-04-09
In thesis
1. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
Open this publication in new window or tab >>Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. In this thesis, silicon nanoparticles are formed in thermally grown SiO2 films by implantation of Si-ions. Implantation parameters such as energy, fluence, and target temperature, as well as post-implantation annealing (PIA) conditions are studied in order to optimize the luminescence properties of the nanoparticles. Ion energies between 15 and 70 keV, fluences up to 1017 atoms/cm2, and target temperatures ranging from room temperature to 600 ºC are employed. The PIA process is carried out at temperatures between 1000 and 1200 °C in ambient nitrogen, or argon gas. In addition, dangling bonds, which reduce the total luminescence of SiNPs, are passivated, using forming gas annealing (FGA). Quantification of hydrogen content induced by FGA process is performed by ion beam analysis (IBA) techniques. Furthermore, irradiations with swift heavy ions (SHIs) with several tens of MeV kinetic energy are performed as a possible way to further reduce the defect density. In particular, the relation between electronic and nuclear stopping for the defect production and annealing is investigated. The composition and physical structure of the samples are studied via IBA techniques, transmission electron microscopy (TEM), and grazing incidence X-ray diffraction (GIXRD). Based on the results from IBA, the implantation profiles are reconstructed. The physical structures of SiNPs revealed by TEM and GIXRD, furthermore, show that the high fluence implantation with an adequate PIA condition leads to the formation of crystalline SiNPs with a mean size of about 6 nm. The optical properties of SiNPs are characterized by photoluminescence (PL) techniques. After the implantation, only defect PL is present, but it is found that intense SiNP PL can be achieved for samples implanted with 15 atomic% excess peak concentration of Si in SiO2 and PIA at 1100 °C in argon gas for 90 minutes. Finally, an alternative way for fabricating SiNPs in SiO2 is tested, using oxygen implantation into a Si wafer. Although the PL from this experiment is less intense than the PL of SiNPs fabricated by the Si-implanted SiO2 route, the results are technologically interesting due to the convenience of the process.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2018. p. 74
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1651
Keywords
Silicon nanoparticle, Photoluminescence, Ion beam synthesis, Ion beam analysis
National Category
Physical Sciences
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-346932 (URN)978-91-513-0287-4 (ISBN)
Public defence
2018-05-08, Å80101, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:00 (English)
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Supervisors
Available from: 2018-04-12 Created: 2018-03-22 Last updated: 2018-04-25

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Xie, LingOttosson, MikaelLEIFER, KLAUS

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