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Luminescence of Silicon Nanoparticles from Oxygen Implanted Silicon
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics. (Ion Physics)ORCID iD: 0000-0001-7229-6857
Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.ORCID iD: 0000-0002-5815-3742
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2018 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 86, p. 18-22Article in journal (Refereed) Published
Abstract [en]

Oxygen with a kinetic energy of 20 keV is implanted in a silicon wafer (100) at different fluences, followed by post-implantation thermal annealing (PIA) performed at temperatures ranging from 1000 to 1200 degrees C, in order to form luminescent silicon nanoparticles (SiNPs) and also to reduce the damage induced by the implantation. As a result of this procedure, a surface SiOx layer (with 0 < x < 2) with embedded crystalline Si nanoparticles has been created. The samples yield similar luminescence in terms of peak wavelength, lifetime, and absorption as recorded from SiNPs obtained by the more conventional method of implanting silicon into silicon dioxide. The oxygen implantation profile is characterized by elastic recoil detection (ERD) technique to obtain the excess concentration of Si in a presumed SiO2 environment. The physical structure of the implanted Si wafer is examined by grazing incidence X-ray diffraction (GIXRD). Photoluminescence (PL) techniques, including PL spectroscopy, time-resolved PL (TRPL), and photoluminescence excitation (PLE) spectroscopy are carried out in order to identify the PL origin. The results show that luminescent SiNPs are formed in a Si sample implanted by oxygen with a fluence of 2 x 10(17) atoms cm(-2) and PIA at 1000 degrees C. These SiNPs have a broad size range of 6-24 nm, as evaluated from the GIXRD result. Samples implanted at a lower fluence and/or annealed at higher temperature show only weak defect-related PL. With further optimization of the SiNP luminescence, the method may offer a simple route for integration of luminescent Si in mainstream semiconductor fabrication.

Place, publisher, year, edition, pages
2018. Vol. 86, p. 18-22
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:uu:diva-346929DOI: 10.1016/j.mssp.2018.06.004ISI: 000439119400003OAI: oai:DiVA.org:uu-346929DiVA, id: diva2:1192577
Funder
Swedish Research Council, 821-2012-5144Swedish Research Council, 2017-00646_9Swedish Foundation for Strategic Research Available from: 2018-03-22 Created: 2018-03-22 Last updated: 2018-09-26Bibliographically approved
In thesis
1. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
Open this publication in new window or tab >>Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. In this thesis, silicon nanoparticles are formed in thermally grown SiO2 films by implantation of Si-ions. Implantation parameters such as energy, fluence, and target temperature, as well as post-implantation annealing (PIA) conditions are studied in order to optimize the luminescence properties of the nanoparticles. Ion energies between 15 and 70 keV, fluences up to 1017 atoms/cm2, and target temperatures ranging from room temperature to 600 ºC are employed. The PIA process is carried out at temperatures between 1000 and 1200 °C in ambient nitrogen, or argon gas. In addition, dangling bonds, which reduce the total luminescence of SiNPs, are passivated, using forming gas annealing (FGA). Quantification of hydrogen content induced by FGA process is performed by ion beam analysis (IBA) techniques. Furthermore, irradiations with swift heavy ions (SHIs) with several tens of MeV kinetic energy are performed as a possible way to further reduce the defect density. In particular, the relation between electronic and nuclear stopping for the defect production and annealing is investigated. The composition and physical structure of the samples are studied via IBA techniques, transmission electron microscopy (TEM), and grazing incidence X-ray diffraction (GIXRD). Based on the results from IBA, the implantation profiles are reconstructed. The physical structures of SiNPs revealed by TEM and GIXRD, furthermore, show that the high fluence implantation with an adequate PIA condition leads to the formation of crystalline SiNPs with a mean size of about 6 nm. The optical properties of SiNPs are characterized by photoluminescence (PL) techniques. After the implantation, only defect PL is present, but it is found that intense SiNP PL can be achieved for samples implanted with 15 atomic% excess peak concentration of Si in SiO2 and PIA at 1100 °C in argon gas for 90 minutes. Finally, an alternative way for fabricating SiNPs in SiO2 is tested, using oxygen implantation into a Si wafer. Although the PL from this experiment is less intense than the PL of SiNPs fabricated by the Si-implanted SiO2 route, the results are technologically interesting due to the convenience of the process.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2018. p. 74
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1651
Keywords
Silicon nanoparticle, Photoluminescence, Ion beam synthesis, Ion beam analysis
National Category
Physical Sciences
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-346932 (URN)978-91-513-0287-4 (ISBN)
Public defence
2018-05-08, Å80101, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:00 (English)
Opponent
Supervisors
Available from: 2018-04-12 Created: 2018-03-22 Last updated: 2018-04-25

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Chulapakorn, ThawatchartOttosson, MikaelHallén, Anders

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