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Sulfurization of Co-Evaporated Cu(In,Ga)Se-2 as a Postdeposition Treatment
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Solibro Res AB, S-75651 Uppsala, Sweden..
Solibro Res AB, S-75651 Uppsala, Sweden..
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2018 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 8, no 2, p. 604-610Article in journal (Refereed) Published
Abstract [en]

It is investigated if the performance of Cu(In,Ga)Se-2 (CIGSe) solar cells produced by co-evaporation can be improved by surface sulfurization in a postdeposition treatment. The expected benefit would be the formation of a sulfur/selenium gradient resulting in reduced interface recombination and increased open-circuit voltage. In the conditions used here it was, however, found that the reaction of the CIGSe layer in a sulfur environment results in the formation of a CuInS2 (CIS) surface phase containing no or very little selenium and gallium. At the same time, a significant pile up of gallium was observed at the CIGSe/CIS boundary. This surface structure was formed for a wide range of annealing conditions investigated in this paper. Increasing the temperature or extending the time of the dwell stage had a similar effect on the material. The gallium enrichment and CIS surface layer widens the surface bandgap and therefore increases the open-circuit voltage. At the same time, the fill factor is reduced, since the interface layer acts as an electron barrier. Due to the balance of these effects, the conversion efficiency could not be improved.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 8, no 2, p. 604-610
Keywords [en]
Alloying, Cu(In, Ga)Se-2 (CIGSe), postdeposition treatment, surface treatment, thin-film solar cells
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-348836DOI: 10.1109/JPHOTOV.2018.2793759ISI: 000425525100034OAI: oai:DiVA.org:uu-348836DiVA, id: diva2:1200063
Funder
Swedish Foundation for Strategic Research , RMA15-0030Available from: 2018-04-23 Created: 2018-04-23 Last updated: 2018-09-14Bibliographically approved

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Larsen, Jes KKeller, JanRiekehr, LarsScragg, Jonathan J.Platzer Björkman, Charlotte

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