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Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
Canberra, Australien.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.ORCID iD: 0000-0002-1393-1723
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 20, p. 205901-Article in journal (Refereed) Published
Abstract [en]

This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25-200 degrees C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 degrees C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 degrees C but that deformation by twinning along {111} planes dominates at 150 degrees C and 200 degrees C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nano

Place, publisher, year, edition, pages
2015. Vol. 117, no 20, p. 205901-
Keywords [en]
crystal defects, nanoindentation, crystal structure, deformation, elemental semiconductors, solid-state phase transformations, optical microscopy, silicon
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:uu:diva-351523DOI: 10.1063/1.4921534OAI: oai:DiVA.org:uu-351523DiVA, id: diva2:1210354
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-09-13Bibliographically approved

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