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Low-Temperature Nb-Doped SnO2 Electron-Selective Contact Yields over 20% Efficiency in Planar Perovskite Solar Cells
Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Lab Photomol Sci, CH-1015 Lausanne, Switzerland;Isfahan Univ Technol, Dept Mat Engn, Esfahan 8415683111, Iran.
Isfahan Univ Technol, Dept Mat Engn, Esfahan 8415683111, Iran.
Ecole Polytech Fed Lausanne, Lab Photon & Interfaces, Inst Chem Sci & Engn, CH-1015 Lausanne, Switzerland;Helmholtz Zentrum Berlin, Young Investigator Grp Electrochem Convers CO2, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
Ecole Polytech Fed Lausanne, Lab Photon & Interfaces, Inst Chem Sci & Engn, CH-1015 Lausanne, Switzerland;Imperial Coll London, Dept Chem, London SW7 2AZ, England.
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2018 (English)In: ACS Energy Letters, ISSN 2380-8195, Vol. 3, no 4, p. 773-778Article in journal (Refereed) Published
Abstract [en]

Low-temperature planar organic inorganic lead halide perovskite solar cells have been at the center of attraction as power conversion efficiencies go beyond 20%. Here, we investigate Nb doping of SnO2 deposited by a low-cost, scalable chemical bath deposition (CBD) method. We study the effects of doping on compositional, structural, morphological, and device performance when these layers are employed as electron-selective layers (ESLs) in planar-structured PSCs. We use doping concentrations of 0, 1, 5, and 10 mol % Nb to Sn in solution. The ESLs were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, and ultraviolet visible spectroscopy. ESLs with an optimum 5 mol % Nb doping yielded, on average, an improvement of all the device photovoltaic parameters with a champion power conversion efficiency of 20.5% (20.1% stabilized).

Place, publisher, year, edition, pages
2018. Vol. 3, no 4, p. 773-778
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Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-353210DOI: 10.1021/acsenergylett.8b00055ISI: 000430369600004OAI: oai:DiVA.org:uu-353210DiVA, id: diva2:1217351
Available from: 2018-06-13 Created: 2018-06-13 Last updated: 2018-06-13Bibliographically approved

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Ahmed, TahaEdvinsson, Tomas

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