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Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA.
Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany.
Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA.
Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany.
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2018 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 97, no 15, article id 155149Article in journal (Refereed) Published
Abstract [en]

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

Place, publisher, year, edition, pages
2018. Vol. 97, no 15, article id 155149
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Condensed Matter Physics
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URN: urn:nbn:se:uu:diva-354111DOI: 10.1103/PhysRevB.97.155149ISI: 000430545100003OAI: oai:DiVA.org:uu-354111DiVA, id: diva2:1220781
Available from: 2018-06-19 Created: 2018-06-19 Last updated: 2018-06-26Bibliographically approved

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Pálsson, Gunnar K.

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