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Defected and Functionalized Germanene-based Nanosensors under Sulfur Comprising Gas Exposure
Univ Queensland, Australian Inst Bioengn & Nanotechnol, Ctr Theoret & Computat Mol Sci, Australia.
Khon Kaen Univ, Dept Phys, Integrated Nanotechnol Res Ctr, Khon Kaen, Thailand; Nanotec KKU Ctr Excellence Adv Nanomat Energy Pro, Khon Kaen, Thailand.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.ORCID iD: 0000-0002-6765-2084
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory. King Abdullah Univ Sci & Technol, Phys Sci & Engn Div PSE, Thuwal, Saudi Arabia.
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2018 (English)In: ACS SENSORS, ISSN 2379-3694, Vol. 3, no 4, p. 867-874Article in journal (Refereed) Published
Abstract [en]

Efficient sensing of sulfur containing toxic gases like H2S and SO2 is of the utmost importance due to the adverse effects of these noxious gases. Absence of an efficient 2D-based nanosensor capable of anchoring H2S and SO2 with feasible binding and an apparent variation in electronic properties upon the exposure of gas molecules has motivated us to explore the promise of a germanene nanosheet (Ge-NS) for this purpose. In the present study, we have performed a comprehensive computational investigation by means of DFT-based first-principles calculations to envisage the structural, electronic, and gas sensing properties of pristine, defected, and metal substituted Ge-NSs. Our initial screening has revealed that although interaction of SO2 with pristine Ge-NSs is within the desirable range, H2S binding however falls below the required values to guarantee an effective sensing. To improve the binding characteristics, we have considered the interactions between H2S and SO2 with defected and metal substituted Ge-NS. The systematic removals of Ge atoms from a reasonably large super cell lead to monovacancy, divacancies, and trivacancies in Ge-NS. Similarly, different transition metals like As, Co, Cu, Fe, Ga, Ge, Ni, and Zn have been substituted into the monolayer to realize substituted Ge-NS. Our van der Waals corrected DFT calculations have concluded that the vacancy and substitution defects not only improve the binding characteristics but also enhance the sensing propensity of both H2S and SO2. The total and projected density of states show significant variations in electronic properties of pristine and defected Ge-NSs before and after the exposure to the gases, which are essential in constituting a signal to be detected by the external circuit of the sensor. We strongly believe that our present work would not only advance the knowledge towards the application of Ge-NS-based sensing but also provide motivation for the synthesis of such efficient nanosensor for H2S and SO2 based on Ge monolayer.

Place, publisher, year, edition, pages
2018. Vol. 3, no 4, p. 867-874
Keywords [en]
binding characteristics, nano sheets, substitution, nanostructures, nanosensors
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-355689DOI: 10.1021/acssensors.8b00167ISI: 000431165200018PubMedID: 29582648OAI: oai:DiVA.org:uu-355689DiVA, id: diva2:1231189
Funder
Swedish Research CouncilStandUpCarl Tryggers foundation Available from: 2018-07-05 Created: 2018-07-05 Last updated: 2018-07-05Bibliographically approved

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Chakraborty, SudipVovusha, HakkimAhuja, Rajeev

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